This study examines the surface composition and atomic distribution of the Si-Cu(100) system after implantation with Ch+ ions. For the first time, the distribution of atoms across the surface and within the surface layer of the Si/Cu(100) system has been analyzed following ion implantation. The findings demonstrate that by implanting pure Si/Cu with O2+ ions and applying heat, it is possible to obtain a SiCh nanofilm with a thickness of approximately 1.5-2 nm.